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ICP etch process for ultra-low-K delayering for 20 nm technology node
Feb 28, 2017
|
Plasma Processing Technology
ICP etch process for ultra-low-K delayering in 20 nm technology node
Typical performance
Ultra-Low-K dielectric etching
Etch rate 200 nm/min
Selectivity vs. Al/Cu > 50:1
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