Compound Semiconductor Power Devices

Exceptional process flexibility, from high SiC etch rates to low damage film deposition

POWER DEVICES MARKET OVERVIEW
CORIAL SOLUTIONS & ADVANTAGES
ETCH PROCESSES
DEPOSITION PROCESSES
PRODUCTS

Power devices market overview

Demand for wide bandgap power semiconductor components is principally driven by growth of the hand-held devices market, where efficient power management is appreciated key requirement.

The exponential growth in the adoption of green energy sources for industrial and consumer markets (wind power, solar cells, electric vehicles, etc.) is another driver for wide bandgap semiconductors. These materials are a critical part of high current/high voltage devices.

CORIAL solutions

Silicon carbide (SiC) and gallium nitride (GaN) are materials of choice in the manufacture of power semiconductor devices.

CORIAL offers equipment that specifically target etch and deposition processes for compound semiconductor-based power devices.

CORIAL Advantages

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Equipment is easily scalable from R&D to volume production

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Retractable liner protects reactor, and collects etch by-products

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One chamber for all wafer sizes

Etch processes

Power semiconductor device manufacturing requires a range of dry etch processes, including deep trench etch, smooth feature etch, and low damage etch.

SiC DRIE

Smooth sidewalls
Etch rate 0.7 µm/min
Selectivity vs mask > 2.5:1

SiC via etch

> 100 µm etch depth
Etch rate 1.4 µm/min
Selectivity vs. Ni mask > 15:1

SiC feature etch

Etch depth > 1 µm
Etch rate 0.8 µm/min
Roughness < 5 nm

GaN Feature etch

Anisotropic etch
Etch rate 200 nm/min
Low plasma damage

Deposition processes

Typical plasma enhanced deposition applications for power device manufacturing include passivation, dielectrics, and masks. CORIAL’s PECVD tools are designed to ensure tight control of film stress, from tensile to compressive, and to produce high deposition rates films without any compromise in uniformity or film quality. CORIAL also offers low temperature and low damages PECVD processes for nitride and oxide films.