Highly conformal coating for MEMS, nanotechnology applications, and semiconductor devices
Atomic Layer Deposition (ALD), used to deposit films on a monolayer scale, has become widely adopted in R&D and various industries.
The ALD mechanism proceeds by a limited surface chemical reaction, and thus ALD processes offer superior deposition uniformity and conformality over varied substrate sizes and shapes.
ALD process cycle
ALD is a time-multiplexed process comprising of cycles with 4 steps in a cycle.
After completion, the ALD cycle is started again, producing layer-by-layer growth.
Continued progress has been achieved with ALD, demonstrating the capability to use this technique to deposit a variety of materials.
Corial 200 Series System for Atomic Layer Deposition
Process control software for time-multiplexed processes
- Deposition system with the capability to operate in PECVD and ALD modes in the same reactor
- Plasma-enhanced ALD for higher quality films
- Handling up to 200 mm wafer sizes
- Enables ALD process control on conventional PECVD systems
- Advanced tuning of RF pulsing to control ion energy
- Independent and rapid pulsing of gases, down to 10 ms
- Real-time process adjustment