---
title: Si DRIE process on conventional ICP-RIE tool
description: Si DRIE process on conventional ICP-RIE tool | Corial
image: https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/Si-DRIE.jpg
---

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# Si DRIE process on conventional ICP-RIE tool

Feb 5, 2018 | [Featured Solutions](https://corial.plasmatherm.com/en/blog/tag/featured-solutions)

Our Process Team has recently developed a process recipe for deep etch of silicon-based MEMS structures on SoI wafers.

[![Si DRIE process on conventional ICP-RIE tool ](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/Si-DRIE.png "Si DRIE process on conventional ICP-RIE tool ")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/Si-DRIE.png)

## Process recipe

This new recipe confirms the capability of our Corial 210IL ICP-RIE etch tool to achieve deep Si etching and at the same time to address all the usual applications of Corial ICP-RIE machines after quick (30 mins) conversion.

**CORIAL Bosch-like process has 3 steps**

- step 1 – polymer deposition by C4F8 plasma
- step 2 – polymer etching  by SF6 plasma
- step 3 – Silicon etching with 20W of RF power, which was used to increase the silicon etching rate.

To alternate between each step, [COSMA pulse software](https://corial.plasmatherm.com/en/products/cosma-pulse-control-software-for-time-multiplexed-processes/) is required for pulsing consecutively C4F8 gas flow, SF6 gas flow, LF and RF power.

## Corail 210IL ICP-RIE tool with DRIE configuration

![Corail 210IL ICP-RIE tool with DRIE configuration
  ](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Corial-210IL-300x294.png?width=300&height=294&name=Corial-210IL-300x294.png)

 

- High power (2 KW) ICP source producing uniform high density plasma,
- High power (1 KW) RF source to ensure high silicon etch rates,
- ICP source with the hot quartz liner allowing to diminish loss of reactive species,
- Very high conductance pumping system for operation at high gas flow rates,
- Helium pressure to ensure the thermal transfer between the cathode, the substrate holder and the substrates,
- Aluminum brace between ICP source and vacuum vessel to balance the ion and reactive species fluxes in order to enable Bosch-like processes,
- COSMA Pulse software enabling time-multiplexed processing,
- Capability to process a wide range of materials including silicon, oxides, nitrides, polymers, metals, III-V & II-VI compound semiconductors, and hard materials after quick hardware conversion.

## Process performances for application #1

- 60 µm etch depth demo for a process requiring to stop on an SiO2 layer buried at 60 µm below the substrate surface,
- Open Si area is 10%, the rest surface was covered by Kapton.

 

- **5 µm feature size**
- **Etch rate 1.4 µm/min**
- **selectivity vs. SiO2 110**
- **Profile > 90°**
- **AR 1:17**
- **Uniformity over 4’’ wafer is 4% with exclusion zone of 10 mm**

## Process performances for application #2

- 200 µm etch depth demo for a TSV process,
- Open Si area is 10%, the rest surface was covered by Kapton.

 

- **5 µm feature size**
- **Etch rate 0.91 µm/min**
- **AR 1:33 **
- **Selectivity vs. SiO2 >70**
- **Profile Anisotropic**
- **Uniformity over 4’’ wafer is 4% with exclusion zone of 10 mm**

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