--- title: Corial 210IL ICP-RIE etch system | Corial description: Get maximum flexibility with the only 200 mm etch system with the capability to support ICP, RIE, ALE and DRIE technologies in the SAME reactor --- [![CORIAL-PT-LOGO-2021 v6](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL-PT-LOGO-2021%20v6.png?width=3397&height=1147&name=CORIAL-PT-LOGO-2021%20v6.png "CORIAL-PT-LOGO-2021 v6")](https://corial.plasmatherm.com/en?hsLang=en) Menu - [ABOUT](https://corial.plasmatherm.com/en/about-corial) - Blank wrapper - [Plasma-Therm Website](http://plasmatherm.com/) - [TECHNOLOGIES](https://corial.plasmatherm.com/en/technologies/plasma-technologies) - blank - blank-inner - Plasma etch - blank-inner - [RIE](https://corial.plasmatherm.com/en/technologies/reactive-ion-etching-rie) - [ICP-RIE](https://corial.plasmatherm.com/en/technologies/icp-rie-inductively-coupled-plasma-reactive-ion-etching) - [DRIE](https://corial.plasmatherm.com/en/technologies/drie-deep-reactive-ion-etching) - blank - blank-inner - blank-inner - [ICP-CVD](https://corial.plasmatherm.com/en/technologies/icp-cvd-inductively-coupled-plasma-chemical-vapor-deposition/) - [PECVD](https://corial.plasmatherm.com/en/technologies/pecvd-plasma-enhanced-chemical-vapor-deposition) - blank - blank-inner - blank-inner - [ALE](https://corial.plasmatherm.com/en/technologies/ale-atomic-layer-etching) - [ALD](https://corial.plasmatherm.com/en/technologies/ald-atomic-layer-deposition) - [BLOGS](https://corial.plasmatherm.com/en/blog) - Blank wrapper - [CORIAL Blog](https://corial.plasmatherm.com/en/blog) - [Plasma-Therm Blog](https://blog.plasmatherm.com) - [CONTACT US](https://corial.plasmatherm.com/en/contact-us) - Blank wrapper # Corial 210IL ICP-RIE etch system Get maximum flexibility with the only 200 mm etch system with the capability to support ICP, RIE, ALE and DRIE technologies in the SAME reactor [THE PRODUCT IN BRIEF](https://corial.plasmatherm.com/en/products/corial-210il-icp-rie-etch-tool#description) [KEY BENEFITS](https://corial.plasmatherm.com/en/products/corial-210il-icp-rie-etch-tool#benefits)[RELATED PROCESSES](https://corial.plasmatherm.com/en/products/corial-210il-icp-rie-etch-tool#processes)[UPGRADES](https://corial.plasmatherm.com/en/products/corial-210il-icp-rie-etch-tool#upgrades) ## Corial 210IL ICP etch system in brief Corial 210IL is designed for R&D and low volume production, and offers a wide range of applications for the specialty semiconductor market. This etcher is based on CORIAL’s latest generation of inductively coupled plasma reactor. The system features high density plasma, helical antenna, 2 MHz ICP RF generator and quartz liner, enabling high etch rates and excellent uniformities. Featuring a vacuum load lock, the Corial 210IL ensures stable process conditions and short pumping cycles, and offers the capability to run fluorinated and chlorinated chemistries in the same process recipe. The Corial 210IL ICP-RIE system can process a wide range of materials including silicon, oxides, nitrides, polymers, metals, III-V & II-VI compound semiconductors, and hard materials. When equipped with a 2 kW ICP source, the 210IL enables deep reactive ion etching of hard materials as Al2O3, SiC, LiTaO3, sapphire and glass. With our **CORTEX Pulse** software, pulsed or time-multiplexed processes can also be applied for Atomic Layer Etching (ALE) and deep silicon etch (DRIE) on our conventional Corial 210IL ICP-RIE system. ## ![Key Benefits](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Icon-Key-Bebefits.png?width=35&height=35&name=Icon-Key-Bebefits.png)Key benefits R #### PROCESS FLEXIBILITY RF match box offers a matching range of 100 to 2000 W to accommodate a wide range of materials and customer requirements Vacuum load lock supports using fluorinated and chlorinated chemistries in the same tool R #### HIGH ETCH RATE CAPABILITY Wall temperature \> 250°C, ICP max power: 2000 W; RF max power: 1000 W; high efficiency of RF coupling to plasma Fast and uniform etching: polymers (800 nm/min), diamond (500 nm/min), GaN (1200 nm/min)… R #### BEST REPEATABILITY Load lock for stable and repeatable process conditions New cathode design and efficient helium back side cooling of the shuttle and substrate ensure uniform temperature control (from -50°C) during the etch process R #### EXCELLENT PARTICLE CONTROL Retractable ICP liner collects non-volatile species and minimizes process cross-contamination R #### UNIQUE SHUTTLE HOLDING APPROACH Our shuttle (carrier) design, combined with a standard cathode, offer a cost-effective and fast reactor conversion, for multiple applications and substrate types R #### HIGH UPTIME Reactor with heated walls and retractable liner increases time between cleans and reduces clean time Typical reactor cleaning time is 30 minutes ## Related processes![Related processes](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Icon-Etch.png?width=35&height=35&name=Icon-Etch.png) Typical materials that can be processed with the Corial 210IL ICP-RIE system include: - Silicon - Oxides: SiO2, Si3N4 - Polymers: PMMA, Polyimide, BCB, Photoresist - III-V compounds: GaN, AlGaN, InP - II-VI compounds: ZnS, CdTe, HgCdTe - Metals: Al, Cr, Au, Ni, Fe, Pt, Cu, Ti, TiN, TiW, W, Ta, TaN, Ge, Nb, Nbn, Mo - Hard Materials: Al2O3, SiC, LiTaO3, Glasses, Quartz, Sapphire The Corial 210IL can serve a variety of applications in specialty semiconductors markets including: - Optoelectronics - MEMS - Power devices - Wireless IC - Advanced Packaging - Integrated optics - R&D ### SiO2 Microlenses etch on 150 mm wafer [![ICP etch process for silicon dioxide (SiO2) microlenses application](https://corial.plasmatherm.com/hubfs/ICP-RIE-SiO2-Microlenses-PWP-ST.jpg "ICP etch process for silicon dioxide (SiO2) microlenses application")](https://corial.plasmatherm.com/hubfs/ICP-RIE-SiO2-Microlenses-PWP-ST.jpg?hsLang=en) ## ICP etch process for silicon dioxide (SiO2) microlenses application **Integrated Optics** - Etch depth 20 µm - Etch rate 400 nm/min - Uniformity ±3% ### SiC transistor etch on 100 mm wafer [![SiC transistor etch on 100 mm wafer for power semiconductor device manufacturing](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/ICP-RIE-SiC-Anisotrope-PWP-ST-1.jpg "SiC transistor etch on 100 mm wafer for power semiconductor device manufacturing")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/ICP-RIE-SiC-Anisotrope-PWP-ST-1.jpg?hsLang=en) ## SiC transistor etch on 100 mm wafer for power semiconductor device manufacturing **Power devices** - Etch depth 2.5 µm - Etch rate \> 700 nm/min - Etch profile 87° ### Polyimide etch on 150 mm wafer [![Polyimide etch on 150 mm wafer for microelectromechanical system manufacturing](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/ICP-RIE-polyimide-etching-MEMS-application.jpg "Polyimide etch on 150 mm wafer for microelectromechanical system manufacturing")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/ICP-RIE-polyimide-etching-MEMS-application.jpg?hsLang=en) ## Polyimide etch on 150 mm wafer for microelectromechanical system manufacturing **MEMS** - Selectivity vs. mask \> 50:1 - Etch depth 6 µm - Etch rate 800 nm/min ### Si DRIE using alternated process on 100 mm wafer [![Silicon deep etch (DRIE) using time-multiplexed process on 100 mm wafer](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/ICP-RIE-Bosch-600W-PWP-ST-1.jpg "Silicon deep etch (DRIE) using time-multiplexed process on 100 mm wafer")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/ICP-RIE-Bosch-600W-PWP-ST-1.jpg?hsLang=en) ## Silicon deep etch (DRIE) using time-multiplexed process on 100 mm wafer **MEMS** - Etch though the wafer - Etch rate \> 1.5 µm/min - Selectivity vs. PR mask \>150:1 ### GaN ISO etch on 100 mm wafer [![GaN ISO etch process on 100 mm wafer](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/GaN-deep-etch-isolation.jpeg "GaN ISO etch process on 100 mm wafer")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/GaN-deep-etch-isolation.jpeg?hsLang=en) ## GaN ISO etch process on 100 mm wafer **Optoelectronics** - Etch depth 7 µm - Etch rate 1200 nm/min - Etch profile \> 30° ### PSS etch on 150 mm wafer [![PSS sapphire etch process on 150 mm wafer](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/ICP-RIE-PSS-2700X1700-PWP-ST-1.jpg "PSS sapphire etch process on 150 mm wafer")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/ICP-RIE-PSS-2700X1700-PWP-ST-1.jpg?hsLang=en) ## PSS sapphire etch process on 150 mm wafer **Optoelectronics** - Uniformity ±2% - Etch rate 100 nm/min - Etch profile conical ### Si Atomic Layer Etching (ALE) [![Atomic Layer Etching (ALE) of silicon](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/ICp-RIE-Si-ALE-PWP-ST.jpg "Atomic Layer Etching (ALE) of silicon")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/ICp-RIE-Si-ALE-PWP-ST.jpg?hsLang=en) ## Atomic Layer Etching (ALE) of silicon **R&D** - Etch rate 1.675 nm/min - Atomically smooth surfaces - High etch selectivity ### Glass etch on 100 mm wafer [![Deep etch of glass on 100 mm wafer](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/ICP-RIE-Verre-80%C2%B5m-PWP-ST.jpg "Deep etch of glass on 100 mm wafer")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/ICP-RIE-Verre-80%C2%B5m-PWP-ST.jpg?hsLang=en) ## Deep etch of glass on 100 mm wafer **Advanced Packaging** - Etch depth 80 µm - Etch rate 0.6 µm/min - Selectivity vs. Ni mask \> 25:1 ## Upgrades![Icon](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Icon-Related-Product.png?width=35&height=35&name=Icon-Related-Product.png) The Corial 210IL ICP-RIE etch system can be thoroughly customized with a wide range of features. ##### Additional gas inputs ![Additional gas inputs ](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Gas-box-211x300.png?width=141&height=200&name=Gas-box-211x300.png) Additional gas inputs (up to 8) for more complex process gas combinations ##### Liner for sputter-etch ![](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Liner-RIE.png?width=330&height=200&name=Liner-RIE.png) Ni coated liner to collect sputtered materials in metal RIE sputter-etch mode Quartz liner to collect sputtered materials in metal ICP sputter-etch mode ##### Spacer for selectivity enhancement ![Aluminum brace to improve selectivity versus mask for Si DRIE process ](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Aluminum-brace.jpg?width=385&height=200&name=Aluminum-brace.jpg) Aluminum brace to improve selectivity versus mask for Si DRIE process by a reduction of ion current impinging the wafer surface ##### CORTEX® Pulse software ![COSMA Pulse software adds Atomic Layer Etching and Si DRIE (Bosch Processes) capabilities ](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/COSMA-Pulse.jpg?width=249&height=200&name=COSMA-Pulse.jpg) CORTEX® Pulse software adds Atomic Layer Etching and Si DRIE (Bosch Processes) capabilities to the Corial 210IL by enabling pulsation of any process parameters – including gas flow rate, working pressure, RF power, LF power… ##### Wide temperature range cathode ![Cathode supporting low temperature functionality down to -50°C](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Cathode.png?width=233&height=200&name=Cathode.png) Cathode supporting low temperature functionality down to -50°C ##### Electrostatic chuck ![](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/electrostatic-chuck.png?width=225&height=200&name=electrostatic-chuck.png) Electrostatic chuck delivers reduced capacitive coupling for low damage etch ##### Variety of pumps ![Dry Vacuum Pump and TMP pump with varied pumping rate for increased control over the process chamber pressure](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Pump.png?width=239&height=200&name=Pump.png) Dry Vacuum Pump and TMP pump with varied pumping rate for increased control over the process chamber pressure ##### Variety of RF power supplies ![Higher and lower watt power supplies with automatic matching network](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/RF-power-supply.png?width=486&height=200&name=RF-power-supply.png) Higher and lower output power supplies with automatic matching network ##### Light tower ![Light tower for easy visualization of the plasma processing sequence](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Light-tower.png?width=38&height=200&name=Light-tower.png) The signal light tower provides an easy-to-view indicator of the system’s processing status ##### Laser interferometry ![End point detection by laser interferometry to enhance etch control through automated measurement of etch rate and etch depth](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/End-point-detection.png?width=186&height=200&name=End-point-detection.png) End point detection by laser interferometry to enhance etch control through automated measurement of etch rate and etch depth [![quote\>newsletter](https://no-cache.hubspot.com/cta/default/7547247/2be88541-9961-4fe9-b07c-314e5e653888.png)](https://cta-redirect.hubspot.com/cta/redirect/7547247/2be88541-9961-4fe9-b07c-314e5e653888) [![quote](https://no-cache.hubspot.com/cta/default/7547247/0ee740a6-9189-46b7-b114-011ce7f398c6.png)](https://cta-redirect.hubspot.com/cta/redirect/7547247/0ee740a6-9189-46b7-b114-011ce7f398c6) [![contact](https://no-cache.hubspot.com/cta/default/7547247/d30e55cc-6021-44b7-a53e-75407de513de.png)](https://cta-redirect.hubspot.com/cta/redirect/7547247/d30e55cc-6021-44b7-a53e-75407de513de) ![Corial](https://corial.plasmatherm.com/hubfs/raw_assets/public/CORIAL_May_2020/images/logo-white-1.png) - 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