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Get maximum flexibility with the only 200 mm etch system with the capability to support ICP, RIE, ALE and DRIE technologies in the SAME reactor

THE PRODUCT IN BRIEF
KEY BENEFITS
RELATED PROCESSES
UPGRADES

Corial 210IL ICP etch system in brief

Corial 210IL is designed for R&D and low volume production, and offers a wide range of applications for the specialty semiconductor market.

This etcher is based on CORIAL’s latest generation of inductively coupled plasma reactor. The system features high density plasma, helical antenna, 2 MHz ICP RF generator and quartz liner, enabling high etch rates and excellent uniformities.

Featuring a vacuum load lock, the Corial 210IL ensures stable process conditions and short pumping cycles, and offers the capability to run fluorinated and chlorinated chemistries in the same process recipe.

The Corial 210IL ICP-RIE system can process a wide range of materials including silicon, oxides, nitrides, polymers, metals, III-V & II-VI compound semiconductors, and hard materials.

When equipped with a 2 kW ICP source, the 210IL enables deep reactive ion etching of hard materials as Al2O3, SiC, LiTaO3, sapphire and glass.

With our CORTEX Pulse software, pulsed or time-multiplexed processes can also be applied for Atomic Layer Etching (ALE) and deep silicon etch (DRIE) on our conventional Corial 210IL ICP-RIE system.

Key BenefitsKey benefits

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PROCESS FLEXIBILITY

RF match box offers a matching range of 100 to 2000 W to accommodate a wide range of materials and customer requirements

Vacuum load lock supports using fluorinated and chlorinated chemistries in the same tool

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HIGH ETCH RATE CAPABILITY

Wall temperature > 250°C, ICP max power: 2000 W; RF max power: 1000 W; high efficiency of RF coupling to plasma

Fast and uniform etching: polymers (800 nm/min), diamond (500 nm/min), GaN (1200 nm/min)…

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BEST REPEATABILITY

Load lock for stable and repeatable process conditions

New cathode design and efficient helium back side cooling of the shuttle and substrate ensure uniform temperature control (from -50°C) during the etch process

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EXCELLENT PARTICLE CONTROL

Retractable ICP liner collects non-volatile species and minimizes process cross-contamination

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UNIQUE SHUTTLE HOLDING APPROACH

Our shuttle (carrier) design, combined with a standard cathode, offer a cost-effective and fast reactor conversion, for multiple applications and substrate types

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HIGH UPTIME

Reactor with heated walls and retractable liner increases time between cleans and reduces clean time

Typical reactor cleaning time is 30 minutes

Related processesRelated processes

Typical materials that can be processed with the Corial 210IL ICP-RIE system include:

  • Silicon
  • Oxides: SiO2, Si3N4
  • Polymers: PMMA, Polyimide, BCB, Photoresist
  • III-V compounds: GaN, AlGaN, InP
  • II-VI compounds: ZnS, CdTe, HgCdTe
  • Metals: Al, Cr, Au, Ni, Fe, Pt, Cu, Ti, TiN, TiW, W, Ta, TaN, Ge, Nb, Nbn, Mo
  • Hard Materials: Al2O3, SiC, LiTaO3, Glasses, Quartz, Sapphire

The Corial 210IL can serve a variety of applications in specialty semiconductors markets including:

  • Optoelectronics
  • MEMS
  • Power devices
  • Wireless IC
  • Advanced Packaging
  • Integrated optics
  • R&D

SiO2 Microlenses etch on 150 mm wafer

ICP etch process for silicon dioxide (SiO2) microlenses application

ICP etch process for silicon dioxide (SiO2) microlenses application

Integrated Optics

  • Etch depth 20 µm
  • Etch rate 400 nm/min
  • Uniformity ±3%

SiC transistor etch on 100 mm wafer

SiC transistor etch on 100 mm wafer for power semiconductor device manufacturing

SiC transistor etch on 100 mm wafer for power semiconductor device manufacturing

Power devices

  • Etch depth 2.5 µm
  • Etch rate > 700 nm/min
  • Etch profile 87°

Polyimide etch on 150 mm wafer

Polyimide etch on 150 mm wafer for microelectromechanical system manufacturing

Polyimide etch on 150 mm wafer for microelectromechanical system manufacturing

MEMS

  • Selectivity vs. mask > 50:1
  • Etch depth 6 µm
  • Etch rate 800 nm/min

Si DRIE using alternated process on 100 mm wafer

Silicon deep etch (DRIE) using time-multiplexed process on 100 mm wafer

Silicon deep etch (DRIE) using time-multiplexed process on 100 mm wafer

MEMS

  • Etch though the wafer
  • Etch rate > 1.5 µm/min
  • Selectivity vs. PR mask >150:1

GaN ISO etch on 100 mm wafer

GaN ISO etch process on 100 mm wafer

GaN ISO etch process on 100 mm wafer

Optoelectronics

  • Etch depth 7 µm
  • Etch rate 1200 nm/min
  • Etch profile > 30°

PSS etch on 150 mm wafer

PSS sapphire etch process on 150 mm wafer

PSS sapphire etch process on 150 mm wafer

Optoelectronics

  • Uniformity ±2%
  • Etch rate 100 nm/min
  • Etch profile conical

Si Atomic Layer Etching (ALE)

Atomic Layer Etching (ALE) of silicon

Atomic Layer Etching (ALE) of silicon

R&D

  • Etch rate 1.675 nm/min
  • Atomically smooth surfaces
  • High etch selectivity

Glass etch on 100 mm wafer

Deep etch of glass on 100 mm wafer

Deep etch of glass on 100 mm wafer

Advanced Packaging

  • Etch depth 80 µm
  • Etch rate 0.6 µm/min
  • Selectivity vs. Ni mask > 25:1

UpgradesIcon

The Corial 210IL ICP-RIE etch system can be thoroughly customized with a wide range of features.

Additional gas inputs

Additional gas inputs

Additional gas inputs (up to 8) for more complex process gas combinations

Liner for sputter-etch

Ni coated liner to collect sputtered materials in metal RIE sputter-etch mode

Quartz liner to collect sputtered materials in metal ICP sputter-etch mode

Spacer for selectivity enhancement

Aluminum brace to improve selectivity versus mask for Si DRIE process

Aluminum brace to improve selectivity versus mask for Si DRIE process by a reduction of ion current impinging the wafer surface

CORTEX® Pulse software

COSMA Pulse software adds Atomic Layer Etching and Si DRIE (Bosch Processes) capabilities

CORTEX® Pulse software adds Atomic Layer Etching and Si DRIE (Bosch Processes) capabilities to the Corial 210IL by enabling pulsation of any process parameters – including gas flow rate, working pressure, RF power, LF power…

Wide temperature range cathode

Cathode supporting low temperature functionality down to -50°C

Cathode supporting low temperature functionality down to -50°C

Electrostatic chuck

Electrostatic chuck delivers reduced capacitive coupling for low damage etch

Variety of pumps

Dry Vacuum Pump and TMP pump with varied pumping rate for increased control over the process chamber pressure

Dry Vacuum Pump and TMP pump with varied pumping rate for increased control over the process chamber pressure

Variety of RF power supplies

Higher and lower watt power supplies with automatic matching network

Higher and lower output power supplies with automatic matching network

Light tower

Light tower for easy visualization of the plasma processing sequence

The signal light tower provides an easy-to-view indicator of the system’s processing status

Laser interferometry

End point detection by laser interferometry to enhance etch control through automated measurement of etch rate and etch depth

End point detection by laser interferometry to enhance etch control through automated measurement of etch rate and etch depth

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