Key benefits
Related processes
Fast RIE etch of InP
Polysilicon etch with RIE plasma etch technology
Low pressure RIE etching of Titanium on 150 mm wafer
Low damage Silicon Dioxide (SiO2) RIE etch on 100 mm wafer
Upgrades
Additional gas inputs
Additional gas inputs (up to 8) for more complex process gas combinations
Chamber for sputter-etch
The RIE process chamber is designed for etching and/or sputtering of thin films on any kind of substrate, up to 200 mm diameter. The reactor is equipped with a removable liner to collect etch by-products and/or sputtered materials, to increase time between cleans
ICP reactor
The ICP reactor is designed for applications requiring a high-density plasma source. The ICP source results in improved etch rates, better uniformity, selectivity, and profile control
Load-lock
The addition of a load lock enhances process capability (allows the safe use of corrosive and toxic gases), and improves system performance (offers higher process repeatability and faster pump-down time)
Variety of pumps
Dry Vacuum Pump with varied pumping rate for increased control over the process chamber pressure
Variety of power supplies
Higher output power supplies with automatic matching network
Light tower
The signal light tower provides an easy-to-view indicator of the system’s processing status
Laser interferometry
End point detection by laser interferometry to enhance etch control through automated measurement of etch rate and etch depth
