Corial 200I ICP-RIE etch system

Industry-leading uniformity for etching silicon-based compounds and polymers

THE PRODUCT IN BRIEF
KEY BENEFITS
RELATED PROCESSES
UPGRADES

Corial 200I ICP etch system in brief

The Corial 200I ICP-RIE system is designed for R&D centers and IC failure analysis labs.

This equipment uses fluorine- and oxygen-based chemistries to provide leading edge etch rates and uniformities for full wafers of up to 200 mm, as well as dies or packaged dies.

Featuring a short pump-down cycle (<3 minutes), rapid reactor clean time (<20 minutes), and shuttle loading direct on the carrier, the Corial 200I guarantees high system uptime.

Key benefits

FLEXIBILITY

Processing of silicon-based compounds and polymers with multiple etching modes

The unique shuttle (carrier) design, combined with a standard cathode, enable a cost-effective reactor conversion suitable for multiple applications

HIGH PERFORMANCE

Exceptional uniformity, and repeatability enabled with a unique high-power ICP reactor with helical antenna

Wide pressure range offers capability to precisely tune the etch profile

SCALABILITY

Low-risk, cost-effective upgrades extend product capabilities and maximize return on investment

Related processes

Typical materials that can be processed with the Corial 200I ICP-RIE system include:

Silicon and silicon-based compounds (SiO2, Si3N4)
Polymers: PMMA, Polyimide, BCB, Photoresist
Metals: Ti, TiN, TiW, W, Ta, TaN, Ge, Nb, Nbn, Mo

The Corial 200I offers differentiated technology and application-focused capabilities for the IC failure analysis and the R&D markets:

Delayering of polymers and silicon-based compounds for sample preparation prior to IC failure analysis
Capability to etch the wide range of materials used in R&D centers

Deprocessing for 28 nm technology node

Low-K dielectric etching for 28 nm technology node

Failure analysis

Low-K dielectric etching
Etch rate 300 nm/min
Selectivity vs. Al/Cu > 50:1

ILD deprocessing on wafer

SiO2 deprocessing for IC failure analysis in 40 nm technology

Failure analysis

SiO2 etching
Etch rate 140 nm/min
Selectivity vs. metal > 50:1

Silicon Dioxide (SiO2) RIE etch process

Silicon Dioxide (SiO2) RIE etch process on 150 mm wafer

R&D

Etch rate 45 nm/min
Etch depth 800 nm
Uniformity ±3%

Silicon Nitride (Si3N4) ICP etch process

Silicon Nitride (Si3N4) ICP etch process on 150 mm wafer

R&D

Etch rate 350 nm/min
Etch depth 500 nm
Uniformity ±3%

Upgrades

The Corial 200I ICP-RIE etch system can be thoroughly customized with a wide range of features.

Additional gas inputs

Additional gas inputs (up to 8) for more complex process gas combinations

Liner for sputter-etch

Ni coated liner to collect sputtered materials in metal RIE sputter-etch mode

Quartz liner to collect sputtered materials in metal ICP sputter-etch mode

Load-lock

Load-Lock

The addition of a load lock enhances process capability (allows the safe use of corrosive and toxic gases), and improves system performance (offers higher process repeatability and faster pump-down time)

Variety of pumps

Dry Vacuum Pump and TMP pump with varied pumping rate for increased control over the process chamber pressure

Variety of RF power supplies

Higher and lower watt power supplies with automatic matching network

Higher and lower output power supplies with automatic matching network

Light tower

The signal light tower provides an easy-to-view indicator of the system’s processing status

Laser interferometry

End point detection by laser interferometry to enhance etch control through automated measurement of etch rate and etch depth