---
title: Corial 200I ICP-RIE etch system | Corial
description: ICP-RIE equipment for R&D centers and IC failure analysis labs. Benefit from leading edge etch rates for single wafers over up to 200 mm, dies or packaged dies
---

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# Corial 200I ICP-RIE etch system

Industry-leading uniformity for etching silicon-based compounds and polymers

[THE PRODUCT IN BRIEF](https://corial.plasmatherm.com/en/products/corial-200i-icp-rie-etch-tool#description)  
[KEY BENEFITS](https://corial.plasmatherm.com/en/products/corial-200i-icp-rie-etch-tool#benefits)[RELATED PROCESSES](https://corial.plasmatherm.com/en/products/corial-200i-icp-rie-etch-tool#processes)[UPGRADES](https://corial.plasmatherm.com/en/products/corial-200i-icp-rie-etch-tool#upgrades)

## Corial 200I ICP etch system in brief

The Corial 200I ICP-RIE system is designed for R&D centers and IC failure analysis labs.

This equipment uses fluorine- and oxygen-based chemistries to provide leading edge etch rates and uniformities for full wafers of up to 200 mm, as well as dies or packaged dies.

Featuring a short pump-down cycle (<3 minutes), rapid reactor clean time (<20 minutes), and shuttle loading direct on the carrier, the Corial 200I guarantees high system uptime.

## ![Key Benefits](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Icon-Key-Bebefits.png?width=35&height=35&name=Icon-Key-Bebefits.png)Key benefits

R

#### FLEXIBILITY

Processing of silicon-based compounds and polymers with multiple etching modes

The unique shuttle (carrier) design, combined with a standard cathode, enable a cost-effective reactor conversion suitable for multiple applications

R

#### HIGH PERFORMANCE

Exceptional uniformity, and repeatability enabled with a unique high-power ICP reactor with helical antenna

Wide pressure range offers capability to precisely tune the etch profile

R

#### SCALABILITY

Low-risk, cost-effective upgrades extend product capabilities and maximize return on investment

## Related processes![Related processes](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Icon-Etch.png?width=35&height=35&name=Icon-Etch.png)

Typical materials that can be processed with the Corial 200I ICP-RIE system include:

- Silicon and silicon-based compounds (SiO2, Si3N4)
- Polymers: PMMA, Polyimide, BCB, Photoresist
- Metals: Ti, TiN, TiW, W, Ta, TaN, Ge, Nb, Nbn, Mo

The Corial 200I offers differentiated technology and application-focused capabilities for the IC failure analysis and the R&D markets:

- Delayering of polymers and silicon-based compounds for sample preparation prior to IC failure analysis
- Capability to etch the wide range of materials used in R&D centers

### Deprocessing for 28 nm technology node

[![Low-K dielectric etching for 28 nm technology node](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/die-delayering.jpeg "Low-K dielectric etching for 28 nm technology node")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/die-delayering.jpeg?hsLang=en)

## Low-K dielectric etching for 28 nm technology node

**Failure analysis**

- Low-K dielectric etching
- Etch rate 300 nm/min
- Selectivity vs. Al/Cu > 50:1

### ILD deprocessing on wafer

[![SiO2 deprocessing for IC failure analysis in 40 nm technology](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/SiO2-etch-failure-analysis-40nm-technology-1.png "SiO2 deprocessing for IC failure analysis in 40 nm technology")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/SiO2-etch-failure-analysis-40nm-technology-1.png?hsLang=en)

## SiO2 deprocessing for IC failure analysis in 40 nm technology

**Failure analysis**

- SiO2 etching
- Etch rate 140 nm/min
- Selectivity vs. metal > 50:1

### Silicon Dioxide (SiO2) RIE etch process

[![Silicon Dioxide (SiO2) RIE etch process on 150 mm wafer](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/RIE-reactive-ion-etching-process-silicon-dioxide-SiO2-etching.jpg "Silicon Dioxide (SiO2) RIE etch process on 150 mm wafer")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/RIE-reactive-ion-etching-process-silicon-dioxide-SiO2-etching.jpg?hsLang=en)

## Silicon Dioxide (SiO2) RIE etch process on 150 mm wafer

**R&D**

- Etch rate 45 nm/min
- Etch depth 800 nm
- Uniformity ±3%

### Silicon Nitride (Si3N4) ICP etch process

[![Silicon Nitride (Si3N4) ICP etch process on 150 mm wafer](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/ICP-inductive-coupling-plasma-etching-process-silicon-nitride-SI3N4-etching.png "Silicon Nitride (Si3N4) ICP etch process on 150 mm wafer")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/ICP-inductive-coupling-plasma-etching-process-silicon-nitride-SI3N4-etching.png?hsLang=en)

## Silicon Nitride (Si3N4) ICP etch process on 150 mm wafer

**R&D**

- Etch rate 350 nm/min
- Etch depth 500 nm
- Uniformity ±3%

## Upgrades![Icon](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Icon-Related-Product.png?width=35&height=35&name=Icon-Related-Product.png)

The Corial 200I ICP-RIE etch system can be thoroughly customized with a wide range of features.

##### Additional gas inputs

![Additional gas inputs ](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Gas-box-211x300.png?width=141&height=200&name=Gas-box-211x300.png)

Additional gas inputs (up to 8) for more complex process gas combinations

##### Liner for sputter-etch

![](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Liner-RIE.png?width=330&height=200&name=Liner-RIE.png)

Ni coated liner to collect sputtered materials in metal RIE sputter-etch mode

Quartz liner to collect sputtered materials in metal ICP sputter-etch mode

##### Load-lock

![Load-Lock](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Load-Lock.jpg?width=320&height=200&name=Load-Lock.jpg)

The addition of a load lock enhances process capability (allows the safe use of corrosive and toxic gases), and improves system performance (offers higher process repeatability and faster pump-down time)

##### Variety of pumps

![Dry Vacuum Pump and TMP pump with varied pumping rate for increased control over the process chamber pressure](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Pump.png?width=239&height=200&name=Pump.png)

Dry Vacuum Pump and TMP pump with varied pumping rate for increased control over the process chamber pressure

##### Variety of RF power supplies

![Higher and lower watt power supplies with automatic matching network](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/RF-power-supply.png?width=486&height=200&name=RF-power-supply.png)

Higher and lower output power supplies with automatic matching network

##### Light tower

![Light tower for easy visualization of the plasma processing sequence](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Light-tower.png?width=38&height=200&name=Light-tower.png)

The signal light tower provides an easy-to-view indicator of the system’s processing status

##### Laser interferometry

![End point detection by laser interferometry to enhance etch control through automated measurement of etch rate and etch depth](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/End-point-detection.png?width=186&height=200&name=End-point-detection.png)

End point detection by laser interferometry to enhance etch control through automated measurement of etch rate and etch depth

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