Menu
ABOUT
Blank wrapper
History
Partnerships & Awards
Careers
A Plasma-Therm Company
Plasma-Therm Website
RESOURCES
MARKETS
Blank wrapper
Microelectromechanical Systems (MEMS)
Failure Analysis
Optoelectronics
Blank wrapper
Compound Semiconductor Power Devices
Advanced Packaging
Wireless Communication
Blank wrapper
Photomask
Integrated Optics
R&D
TECHNOLOGIES
blank
blank-inner
Plasma etch
blank-inner
Plasma etch
RIE
ICP-RIE
DRIE
blank
blank-inner
Plasma enhanced deposition
blank-inner
Plasma enhanced deposition
ICP-CVD
PECVD
blank
blank-inner
Atomic layer processing
blank-inner
Atomic layer processing
ALE
ALD
PRODUCTS
blank
hardware
blank-inner
first-wrapper
left
Shuttleline® 200
Shuttleline® 300
Shuttleline® 500
mid
Takachi
Kayen
Vision
right
blank
Software
blank
first
CORTEX®
links-wrapper
CORTEX®
Process control software
second
CORTEX®
links-wrapper
CORTEX® Pulse
Control software for time multiplexed processes
third
GLANCE™
links-wrapper
GLANCE™
Reprocessing Software
SERVICES
BLOGS
Blank wrapper
CORIAL Blog
Plasma-Therm Blog
CONTACT US
Blank wrapper
International Network
High temperature PECVD deposition process for SiO2 film
Feb 28, 2017
|
Plasma Processing Technology
High temperature PECVD deposition process for SiO2 films
Typical performance
Deposition rate 250 nm/min
BOE etch rate <100 nm/min
Stress -190 ± 50 MPa
Subscribe Here
Recent Posts
Post Tags
Plasma Processing Technology
(28)
Company News
(15)
Etching Tools
(14)
Featured Solutions
(14)
Deposition Tools
(10)
Employee Spotlight
(3)
Research and Development
(3)
CORIAL products
(2)
Events
(2)
Customer Spotlight
(1)
Wafer Singulation
(1)
see all
