---
title: Corial 200S RIE etch system | Corial
description: This simply to use, manually loaded RIE system is capable of etching a wide range of materials including Si, silicon compounds, metals and polymers with fluorinated reactive gases.
---

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# Corial 200S RIE etch system

Compact, easy-to-use equipment for fluorine-based etching

[THE PRODUCT IN BRIEF](https://corial.plasmatherm.com/en/products/corial-200s-rie-etch-tool#description)  
[KEY BENEFITS](https://corial.plasmatherm.com/en/products/corial-200s-rie-etch-tool#benefits)[RELATED PROCESSES](https://corial.plasmatherm.com/en/products/corial-200s-rie-etch-tool#processes)[UPGRADES](https://corial.plasmatherm.com/en/products/corial-200s-rie-etch-tool#upgrades)

## Corial 200S RIE etch system in brief

This simple-to-use, manually-loaded RIE system can etch a wide range of materials including silicon, silicon-based compounds, metals, and polymers with fluorinated gases.

The Corial 200S is ideal for R&D and can process substrates from small wafer pieces to full 200 mm wafers, thanks to a large variety of substrate holders.

The RIE reactor of the Corial 200S system can be equipped with a Ni coated liner, which extends time between cleans.

With helium back side cooling of the substrate, high sputter rates can be achieved (\> 50 nm/min), while preserving the photoresist mask.

## ![Key Benefits](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Icon-Key-Bebefits.png?width=35&height=35&name=Icon-Key-Bebefits.png)Key benefits

R

#### LOW COST OF OWNERSHIP

Small footprint (0.81 m2) system with rapid substrate loading and unloading

Low maintenance requirements

R

#### HIGH PERFORMANCE

Excellent process control enabled by efficient substrate cooling

Excellent etch control and etch rate determination with end-point detection

## Related processes![Related processes](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Icon-Etch.png?width=35&height=35&name=Icon-Etch.png)

Typical materials that can be processed with the Corial 200S RIE system include:

- Silicon and silicon-based compounds (SiO2, SiNx, Si)
- Polymers: Polyimide, BCB, Photoresist
- Metals: Au, Pt, Fe, Cu, PZT, Ti, TiN, TiW, W, Ta, TaN, Ge, Nb, NbN, Mo

### Silicon Nitride (Si3N4) etch with RIE plasma etch technology

[![Silicon Nitride (Si3N4) etch with RIE plasma etch technology](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/RIE-reactive-ion-etching-Si3N4-etching.png "Silicon Nitride (Si3N4) etch with RIE plasma etch technology")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/RIE-reactive-ion-etching-Si3N4-etching.png?hsLang=en)

## Silicon Nitride (Si3N4) etch with RIE plasma etch technology

**R&D**

- Etch depth 500 nm
- Etch rate \> 70 nm/min
- Selectivity vs. Si underlayer \> 7

### Tantalum (Ta) etch with RIE plasma etch technology

[![Tantalum (Ta) etching with RIE plasma etch technology](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/RIE-reactive-ion-etching-plasma-technology-tantalum-Ta-etching.png "Tantalum (Ta) etching with RIE plasma etch technology")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/RIE-reactive-ion-etching-plasma-technology-tantalum-Ta-etching.png?hsLang=en)

## Tantalum (Ta) etching with RIE plasma etch technology

**R&D**

- Etch profile \> 85°
- Etch rate \> 90 nm/min

### Metal back sputtering with RIE plasma etch technology

[![Metal back sputtering with RIE plasma etch technology](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/RIE-reactive-ion-etching-plama-technology-metal-etching.png "Metal back sputtering with RIE plasma etch technology")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/RIE-reactive-ion-etching-plama-technology-metal-etching.png?hsLang=en)

## Metal back sputtering with RIE plasma etch technology

**R&D**

- Selectivity vs. PR mask \> 1
- Etch depth 200 nm
- Etch rate \> 50 nm/min

### Silicon (Si) etch with RIE plasma etch technology

[![Silicon (Si) etch with RIE plasma etch technology](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/RIE-Si-PWP-ST.jpg "Silicon (Si) etch with RIE plasma etch technology")](https://corial.plasmatherm.com/hubfs/CORIAL_May_2020/images/RIE-Si-PWP-ST.jpg?hsLang=en)

## Silicon (Si) etch with RIE plasma etch technology

**R&D**

- Etch depth 500 nm
- Etch rate 120 nm/min

## Upgrades![Icon](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Icon-Related-Product.png?width=35&height=35&name=Icon-Related-Product.png)

The Corial 200S RIE etch system can be thoroughly customized with a wide range of features.

##### Additional gas inputs

![Additional gas inputs ](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Gas-box-211x300.png?width=141&height=200&name=Gas-box-211x300.png)

Additional gas inputs (up to 8) for more complex process gas combinations

##### Chamber for sputter-etch

![Chamber for sputter-etch
](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Sputter-etch-RIE.jpg?width=233&height=200&name=Sputter-etch-RIE.jpg)

 

The RIE process chamber is designed for etching and/or sputtering of thin films on any kind of substrate, up to 200 mm diameter. The reactor is equipped with a removable liner to collect etch by-products and/or sputtered materials, to increase time between cleans

##### Laser interferometry

![Laser interferometry
](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/End-point-detection.png?width=186&height=200&name=End-point-detection.png)

End point detection by laser interferometry to enhance etch control through automated measurement of etch rate and etch depth

##### Light tower

![Light Tower](https://corial.plasmatherm.com/hs-fs/hubfs/CORIAL_May_2020/images/Light-tower.png?width=38&height=200&name=Light-tower.png)

The signal light tower provides an easy-to-view indicator of the system’s processing status

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