---
title: ICP etch process for ultra-low-K delayering for 20 nm technology node
description: ICP etch process for ultra-low-K delayering for 20 nm technology node | Corial
---

[Blog | CORIAL](https://corial.plasmatherm.com/en/blog)

# [ICP etch process for ultra-low-K delayering for 20 nm technology node](https://corial.plasmatherm.com/en/blog/icp-etch-process-for-ultra-low-k-delayering-for-20-nm-technology-node)

 Written by [Corial](https://corial.plasmatherm.com/en/blog/author/corial) | February 28, 2017 at 1:38 PM

## Typical performance

 

- Ultra-Low-K dielectric etching
- Etch rate 200 nm/min
- Selectivity vs. Al/Cu > 50:1

[View full post](https://corial.plasmatherm.com/en/blog/icp-etch-process-for-ultra-low-k-delayering-for-20-nm-technology-node)

```json
{
  "@context" : "http://schema.org",
  "@type" : "BlogPosting",
  "author" : {
    "@type" : "Person",
    "name" : "Corial"
  },
  "dateModified" : "2020-07-09T18:36:03.487Z",
  "datePublished" : "2017-02-28T13:38:00Z",
  "headline" : "ICP etch process for ultra-low-K delayering for 20 nm technology node",
  "image" : {
    "@type" : "ImageObject",
    "height" : 338,
    "url" : "https://cdn2.hubspot.net/hubfs/7547247/CORIAL_May_2020/images/ICP-ultra-low-k-etch-20-nm-technology-die-deprocessing.jpeg",
    "width" : 450
  },
  "mainEntityOfPage" : "https://corial.plasmatherm.com/en/blog/icp-etch-process-for-ultra-low-k-delayering-for-20-nm-technology-node",
  "publisher" : {
    "@type" : "Organization",
    "logo" : {
      "@type" : "ImageObject",
      "height" : 60,
      "url" : "/hs/hsstatic/content_shared_assets/static-1.4092/img/default-amp-logo.png",
      "width" : 60
    },
    "name" : "Blog"
  }
}
```